DocumentCode :
2512800
Title :
A new filtering technique for increasing the immunity of power transistors to RFI
Author :
Bona, Calogero ; Fiori, Franco
Author_Institution :
EMC Competence Center, Ist. Superiore M. Boella, Turin, Italy
fYear :
2010
fDate :
12-16 April 2010
Firstpage :
1080
Lastpage :
1083
Abstract :
The paper deals with the susceptibility of MOS power transistors to electromagnetic interference. The case of providing electric energy to a power load by means of a MOS power transistor connected in the low-side configuration is considered and radio-frequency interference is superimposed to the drain-source nominal voltage. The causes that lead to switch-on a power transistor driven to be switched-off (and viceversa) are highlighted and a new filtering circuit, which is inserted in the power transistor input loop, is shown. The effectiveness of the proposed filtering technique is proved by computer simulations and experimental test results.
Keywords :
power MOSFET; power filters; radiofrequency interference; MOS power transistors; RFI; drain-source nominal voltage; electromagnetic interference; filtering circuit; filtering technique; power load; power transistor input loop; radio-frequency interference; Cables; Electromagnetic compatibility; Electromagnetic interference; Filtering; Immune system; Immunity testing; Power transistors; Radiofrequency interference; Switching circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility (APEMC), 2010 Asia-Pacific Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-5621-5
Type :
conf
DOI :
10.1109/APEMC.2010.5475628
Filename :
5475628
Link To Document :
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