An Ultra Wide Band Low Noise Amplifier for 10.8 to 20.1 GHz applications

Author

Arefin Mojumder, Md Saiful ; Islam, Md Shariful ; Khan, M. Ziaur Rahman

Author_Institution

Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2014

fDate

20-22 Dec. 2014

Firstpage

560

Lastpage

563

Abstract

Design and simulation of an Ultra Wide Band Low Noise Amplifier for 10.8 to 20.1 GHz applications is presented. A CG-CS topology is adopted in this work. CG is used for input matching in the whole band of operation. Output of the CG is fed to the CS amplifier input to increase the gain of the overall amplifier. The circuit is designed in IBM 130 nm CMOS Technology and simulated in HSPICE RF. The simulated results of the circuit shows 10.2 dB of forward gain (S₂₁) with a bandwidth of 9.3 GHz, -18 dB input return loss (S₁₁), reverse isolation (S12) of -44 dB and -32 dB of output matching parameter (S22) at center frequency, 14 GHz. This circuit exhibits a Nf of 5.03 dB at center frequency and 5.44 dB of average Nf. ICP is -17.2 dBm at the center frequency. It consumes only 7.38 mW when driven from 1.2 V source.

Keywords

CMOS integrated circuits; integrated circuit design; low noise amplifiers; microwave amplifiers; ultra wideband technology; CG-CS topology; CS amplifier; HSPICE RF; IBM CMOS technology; bandwidth 9.3 GHz; frequency 10.8 GHz to 20.1 GHz; frequency 14 GHz; input matching; loss 18 dB; output matching parameter; power 7.38 mW; size 130 nm; ultrawide band low noise amplifier; voltage 1.2 V; Bandwidth; CMOS integrated circuits; CMOS technology; Noise; S-parameters; Ultra-wide-band (UWB); common gate (CG); common source (CS); low noise amplifier (LNA); noise figure (Nf);

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering (ICECE), 2014 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4799-4167-4

Type

conf

DOI

10.1109/ICECE.2014.7026924

Filename

7026924