DocumentCode :
2513447
Title :
Analytical techniques for the simulation of electron transport in semiconductor systems
Author :
Barrett, J.A. ; De Souza, M.M. ; Cirstea, M. ; Cirstea, S.
Author_Institution :
Dept. of Comput. & Technol., Anglia Ruskin Univ., Cambridge, UK
fYear :
2012
fDate :
24-26 May 2012
Firstpage :
822
Lastpage :
826
Abstract :
This work investigates analytical techniques for the solutions of the coupled system of non-linear Schrodinger-Poisson Model for simulation of electronic states in semiconductor devices. Using techniques from complex analysis, we calculate the electrostatic potential and eigenvalues of the system. In particular, the eigenvalues and eigenfunctions are obtained via Evans function which is a complex analytical function. The results obtained for two and three dimensional systems show improved simulation times.
Keywords :
Poisson equation; Schrodinger equation; electron transport theory; semiconductor devices; 3D system; Evans function; complex analysis; complex analytical function; coupled system; eigenfunctions; eigenvalues; electron transport simulation; electronic states; electrostatic potential; nonlinear Schrodinger-Poisson model; semiconductor device; semiconductor system; Computational modeling; Eigenvalues and eigenfunctions; Electric potential; Electrostatics; Equations; Logic gates; Mathematical model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optimization of Electrical and Electronic Equipment (OPTIM), 2012 13th International Conference on
Conference_Location :
Brasov
ISSN :
1842-0133
Print_ISBN :
978-1-4673-1650-7
Electronic_ISBN :
1842-0133
Type :
conf
DOI :
10.1109/OPTIM.2012.6231948
Filename :
6231948
Link To Document :
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