Title :
Terahertz generation by GaAs nanowires
Author :
Trukhin, V.N. ; Buyskih, A.S. ; Buravlev, A.D. ; Cirlin, G.E. ; Horkov, D.P. ; Samoilov, L.L. ; Samsonenko, Yu B.
Author_Institution :
Ioffe Phys. Tech. Inst., St. Petersburg, Russia
Abstract :
The investigation of terahertz generation by the surface of n-InAs layers and by GaAs nanowires grown on n-GaAs (111) substrates is presented. It was observed that the terahertz radiation power efficiency is significantly higher in the second case.
Keywords :
III-V semiconductors; gallium arsenide; nanowires; terahertz wave spectra; GaAs; nanowires; terahertz generation; terahertz radiation power efficiency; Gallium arsenide; Gold; Nonlinear optics; Optical pulses; Optical surface waves; Stimulated emission; Substrates;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380432
