DocumentCode
2515167
Title
BSIM3 MOSFET model accuracy for RF circuit simulation
Author
Tin, Suet Fong ; Osman, Ashraf A. ; Mayaram, Kartikeya ; Hu, Chenming
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
fYear
1998
fDate
9-12 Aug 1998
Firstpage
351
Lastpage
354
Abstract
The accuracy of the BSIM3 MOSFET model for small-signal RF circuit simulation has been investigated for a 0.5 μm CMOS process. Comparisons of the small signal y and s parameters for different bias conditions and channel lengths show that BSIM3 is reasonably well suited for small-signal analyses from 100 kHz up to 10 GHz
Keywords
CMOS integrated circuits; UHF integrated circuits; VHF circuits; circuit simulation; integrated circuit modelling; microwave integrated circuits; 0.5 micron; 1E5 to 1E10 Hz; BSIM3 MOSFET model accuracy; CMOS process; RF circuit simulation; bias conditions; channel lengths; s parameters; y parameters; CMOS process; Circuit simulation; Computational modeling; Data mining; Delay effects; Integrated circuit modeling; MOSFET circuits; Medical simulation; Radio frequency; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE
Conference_Location
Colorado Springs, CO
Print_ISBN
0-7803-4988-1
Type
conf
DOI
10.1109/RAWCON.1998.709209
Filename
709209
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