Title :
SPICE model parameters extraction taking into account the ionizing radiation effects
Author :
Petrosyants, Konstantin ; Kozhukhov, Maxim
Author_Institution :
Moscow Inst. of Electron. & Math., Nat. Res. Univ. "Higher Sch. of Econ.", Moscow, Russia
Abstract :
Universal SPICE macro-model of Si bipolar junction transistor (BJT) and SiGe heterojunction bipolar transistor (HBT) taking into account total irradiation dose effects is presented. A method of macro-model radiation-dependent parameters extraction from the measured data is described. The advantage of the proposed method is simplicity of parameter definition. Simulated and measured transistor characteristics are in a good agreement.
Keywords :
SPICE; bipolar transistors; gamma-ray effects; semiconductor device models; BJT; HBT; SPICE model parameters extraction; Si; SiGe; bipolar junction transistor; heterojunction bipolar transistor; ionizing radiation effects; radiation dependent parameters extraction; total irradiation dose effects; universal SPICE macromodel; Equations; Heterojunction bipolar transistors; Mathematical model; Parameter extraction; Radiation effects; SPICE; Silicon germanium;
Conference_Titel :
Design & Test Symposium (EWDTS), 2014 East-West
Conference_Location :
Kiev
DOI :
10.1109/EWDTS.2014.7027055
