DocumentCode :
2515966
Title :
Research on the transient state of large power voltage source inverter with IGCTs
Author :
Li, Chongjian ; Wang, Chengsheng ; Zhu, Chunyi ; Lan, Zhiming ; Dong, Yuhui
Author_Institution :
Autom. Res. & Design, Inst. of Metall. Ind., Beijing, China
fYear :
2010
fDate :
12-16 April 2010
Firstpage :
218
Lastpage :
221
Abstract :
IGCTs have the features of high current, high voltage, high reliability, compact structure and low loss. They have been widely used in large power voltage source inverter systems now, and they have extensive application prospect. In the paper, the switching property of IGCT used in large power voltage source inverter is investigated. And part of the simulation results are verified with experiment results. The switching process of IGCT will cause the mutation of current and voltage in the inverter. And the short circuit process of the inverter is analyzed. If short circuit occurs in the inverter, resonance current and voltage will appear in the inverter. So, during the design of the inverter, EMC should be carefully considered.
Keywords :
electromagnetic compatibility; invertors; thyristors; EMC; IGCT switching property; integrated gate commutated thyristors; power voltage source inverter; resonance current; resonance voltage; Circuit simulation; Clamps; Diodes; Electromagnetic compatibility; Inductance; Inverters; RLC circuits; Resonance; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility (APEMC), 2010 Asia-Pacific Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-5621-5
Type :
conf
DOI :
10.1109/APEMC.2010.5475798
Filename :
5475798
Link To Document :
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