Title :
The future of silicon-on-insulator (SOI) technology in microelectronic systems
Author :
Lemnios, Zachary J. ; Radack, Daniel J. ; Zolper, John C.
Author_Institution :
Microsyst. Technol. Office, Defense Adv. Res. Projects Agency, Arlington, VA, USA
Abstract :
After many years of materials development and circuit research, silicon-on-insulator (SOI) technology clearly has become a viable approach for high performance microelectronics. As semiconductor technology continues to scale, the value of an SOI materials platform continues to expand. It has become a key technology to enable a new class of micro-scale functionality, through 3-D circuits and mixed technology integration.
Keywords :
SIMOX; integrated circuit technology; mixed analogue-digital integrated circuits; research and development; 3-D circuits; SOI materials development; SOI technology; Si; microelectronic systems; microscale functionality; mixed technology integration; research and development; semiconductor technology; silicon-on-insulator technology; CMOS technology; Integrated circuit technology; Lead compounds; Microelectronics; Production; Semiconductor materials; Silicon on insulator technology; Space technology; Ultra large scale integration; Velocity measurement;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391532
