DocumentCode
2517367
Title
Quantum transport modeling of current fluctuations in semiconductor quantum dots
Author
Zhong Wang ; Iwanaga, M. ; Miyoshi, T.
Author_Institution
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
129
Lastpage
132
Abstract
We propose a novel approach based on interacting Green´s functions on a tight-binding basis to analyze the current fluctuation through a semiconductor quantum dot, where electron-electron interaction is represented by the retarded self-energy.
Keywords
Green´s function methods; current fluctuations; semiconductor quantum dots; shot noise; tight-binding calculations; current fluctuations; electron-electron interaction; interacting Green´s functions; quantum transport modeling; retarded self-energy; semiconductor quantum dots; tight-binding calculations; Charge carrier processes; Electrons; Fluctuations; Green´s function methods; Helium; Quantum dots; Quantum mechanics; Semiconductor device noise; Tunneling; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742728
Filename
742728
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