Comparison of computational methods for MESFET intermodulation characteristics

Author

Brazil, T.J. ; El-Rabaie, S. ; Fusco, V. ; Stewart, J.A.C.

Author_Institution

Dept. of Electron. Eng., Univ. Coll. Dublin, Ireland

fYear

1988

fDate

7-9 June 1988

Firstpage

2287

Abstract

A systematic comparison of a variety of approaches to the numerical calculation of GaAs MESFET intermodulation characteristics is presented, with particular emphasis on large-signal operation. The methods evaluated include direct time-domain analysis, harmonic-balance, Volterra series, and transfer characteristic methods. The advantages and limitations of each technique are assessed in relation to a realistic distributed MESFET power amplifier. It is concluded that the time-domain technique requires the minimum number of assumptions and produces intermodulation characteristics with considerable structural behaviour.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit CAD; field effect transistor circuits; gallium arsenide; intermodulation; microwave amplifiers; nonlinear network analysis; power amplifiers; semiconductor device models; solid-state microwave circuits; time-domain analysis; GaAs MESFET intermodulation characteristics; GaAs transistors; Volterra series; computational methods comparison; direct time-domain analysis; distributed MESFET power amplifier; distributed amplifiers; harmonic-balance; large-signal operation; limitations; numerical calculation; semiconductors; time-domain technique; transfer characteristic methods; Discrete Fourier transforms; Distributed amplifiers; Educational institutions; Frequency; Gallium arsenide; Harmonic analysis; High power amplifiers; MESFETs; Power amplifiers; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1988., IEEE International Symposium on

Conference_Location

Espoo, Finland

Type

conf

DOI

10.1109/ISCAS.1988.15401

Filename

15401