Title :
Correlations between green luminescence efficiency, intrinsic defects and co-doping Cl and S in ZnO phosphors
Author :
Xiao, Yongneng ; Sun, Huiqing ; Xu, Yi ; Han, Shiyang
Author_Institution :
Inst. of Opto-Electron. Mater. & Technol., South China Normal Univ., Guangzhou, China
Abstract :
First-principles pseudo-potential approach on complete zinc oxide (ZnO), vacant O (ZnO:Vo), vacant Zn (ZnO:VZn), interstitial Zn (ZnO:Zni), chloride (Cl) and sulfur (S) co-doped defective ZnO (ZnO:ClSVZn, ZnO:ClSZni) reveal that Vo is a shallow donor dopant which has nothing to do with green emission. VZn and Zni both induce green emission recombination levels in the gap. When Cl and S co-dope in defective ZnO, they will enhance the green emission luminescence intensity, because they can promote the formations of VZn and Zni defects.
Keywords :
II-VI semiconductors; ab initio calculations; chlorine; electron-hole recombination; interstitials; optical materials; phosphors; photoluminescence; pseudopotential methods; semiconductor doping; sulphur; vacancies (crystal); wide band gap semiconductors; zinc compounds; ZnO:Cl,S; codoping; crystal defect; first-principle pseudopotential method; green emission recombination; green luminescence efficiency; interstitials; intrinsic defects; phosphors; vacancies; zinc oxide; Absorption; Crystals; Green products; Luminescence; Phosphors; Zinc oxide; ZnO; defects; first-principles; green emission;
Conference_Titel :
Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4244-8393-8
Electronic_ISBN :
978-1-4244-8392-1
DOI :
10.1109/AOM.2010.5713523