DocumentCode
2519925
Title
Embedded High-k Thin Film Capacitor in Organic Package
Author
Tanaka, Hironori ; Nagata, Takashi Kariya Hiroyasu ; Yoshikawa, Kazuhiro ; Shimizu, Keisuke ; Noguchi, Hidetoshi ; Kato, Shinobu
Author_Institution
R & D Oper., Ibiden Co. Ltd., Ogaki
fYear
2008
fDate
9-12 Dec. 2008
Firstpage
988
Lastpage
993
Abstract
We successfully embedded this thin film capacitor in a conventional plastic-type build-up PKG substrate. The unique thin film capacitor consists of Perovskite-type ceramics sanded by metal electrodes, using thin film process technology. The total thickness is less than 1 um with extremely high permittivity, more than 1 uF/cm2.; the resulting PKG substrate shows short free including capacitor/electrode potions, and the embedded area is more than 10 mm2. The capacitor embedded package substrate has the same appearance as a commonly used conventional LSI package, and the same assembling technique can be applied for flip chip mounting of LSI. The capacitor embedded package shows small impedance values at high frequency area, and thus, exhibits excellent performance against high frequency operated system. This study also includes reliability evaluation of the capacitor embedded package. There is no issue in mechanical reliability evaluation, thermal shock etc., although a little more improvement is still required in high voltage bias test during high humidity reliability. The developed technology and materials are expected for next generation high speed frequency LSI package fabrications.
Keywords
electronics packaging; thin film capacitors; Perovskite-type ceramics; capacitor/electrode potions; embedded high-k thin film capacitor; metal electrodes; organic package; plastic-type build-up PKG substrate; Capacitors; Electrodes; Frequency; High K dielectric materials; High-K gate dielectrics; Large scale integration; Packaging; Plastic films; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location
Singapore
Print_ISBN
978-1-4244-2117-6
Electronic_ISBN
978-1-4244-2118-3
Type
conf
DOI
10.1109/EPTC.2008.4763558
Filename
4763558
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