A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance

Author

Guo, Xinjie ; Shaodi Wang ; Ma, Chenyue ; Zhang, Chenfei ; Lin, Xinnan ; Wu, Wen ; He, Frank ; Wenping Wang ; Liu, Zhiwei ; Zhao, Wei ; Yang, Shengqi

Author_Institution

Sch. of Comput. & Inf. Eng., Peking Univ., Shenzhen, China

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

This paper developed a full three-dimensional (3-D) statistical simulation approach to investigate Fin-width Line Edge Roughness (LER) effect on the FinFETs performance. The line edge roughness is introduced by Matlab program, and then the intrinsic parameter fluctuations at fixed LER parameters are studied in carefully designed simulation experiments. The result shows that Fin-width LER causes a dramatic shift and fluctuations in threshold voltage. The simulation results also imply that the velocity saturation effect may come into effect even under low drain voltage due to LER effect.

Keywords

MOSFET; statistical analysis; 3D statistical simulation approach; Fin-width line edge roughness effect; FinFET performance; Matlab program; intrinsic parameter fluctuation; velocity saturation effect; Cams; Fluctuations; 3-D numerical simulation; Fin-width LER; FinFETs; intrinsic parameter fluctuation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713678

Filename

5713678