RF parameter extraction of Bulk FinFET: A non quasi static approach

Author

Kundu, Atanu ; Syamal, Binit ; Koley, Kalyan ; Sarkar, C.K. ; Mohankumar, N.

Author_Institution

Dept. of Electron. & Commun. Eng., Heritage Inst. of Technol., Kolkata, India

fYear

2010

fDate

15-17 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

In this paper, we present a simple and accurate method to extract the parasitic as well as the intrinsic components of a Bulk FinFET device. Based on the Y- parameter data obtained from the 3-dimensional device simulator Sentaurus TCAD, the parasitic components are de-embedded and an accurate modeling based on the equivalent small signal circuit is presented to extract the intrinsic parameters. The non-quasi static effect is included and so the model predicts the Y parameter values accurately at high frequencies.

Keywords

MOSFET; equivalent circuits; millimetre wave field effect transistors; semiconductor device models; 3-dimensional device simulator; RF parameter extraction; Sentaurus TCAD; Y- parameter data; bulk FinFET device; equivalent small signal circuit; nonquasistatic approach; Capacitance; FinFETs; Immune system; Integrated circuit modeling; Logic gates; Radio frequency; Resistance; De-embedding Technique; FinFET Transistors; High Frequency; Non Quasi static Approach;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-9997-7

Type

conf

DOI

10.1109/EDSSC.2010.5713679

Filename

5713679