Title :
Characteristics of subband current ratio in double-gate MOSFET
Author :
Lou, Haijun ; Lin, Xinnan ; Zhang, Ning ; Zhang, Xukai ; Xu, Jiaajiao ; Wu, Wen ; Liu, Zhiwei ; Wang, Wenping ; Zhao, Wei ; Ma, Yong ; He, Frank ; Chan, Mansun
Abstract :
The subband current is evaluated by solving the non-equilibrium Green´s function (NEGF) self-consistently with Poisson´s equation for the double-gate MOSFETs with different channel lengths and thicknesses. The characteristics of subband current ratio and the details of subband number M are simulated, and the results show that the characteristics of current are determined by the first subband when TSi is smaller than 2.5nm, while the value of TSi is between 3.5nm and 5nm, the current of the second subband needs to be considered. The subband current ratios are highly related to the gate voltage, while less sensitive to the channel length. The suitable subband number M is also discussed for the devices with different sizes, which must be considered in balancing the model accuracy and the efficiency.
Keywords :
Green´s function methods; MOSFET; Poisson equation; electric current; Poisson equation; channel length; channel thickness; double gate MOSFET; gate voltage; nonequilibrium Green´s function; subband current ratio; subband number; Analytical models; MOSFETs; Nanowires; M; NEGF; double-gate; subband current ratio;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713686
