Title :
A low noise charge sensitive amplifier with adjustable leakage compensation in 0.18µm CMOS process
Author :
Li, XiangYu ; Zhang, Qi ; Sun, Yihe
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
Abstract :
Gate leakage of charge sensitive amplifier (CSA) in deep submicron process not only increases noise but also impacts the DC voltage of preamplifier output. This paper proposes a CSA for CdZnTe particle detector readout implemented in 0.18μm CMOS process including its new reset and leakage compensation configuration which has low noise and short reset time, especially, is adjustable to fit leakage current variation. This design is tape out verified. The test chip achieves 250e equivalent noise charge. And its reset time is adjustable indeed.
Keywords :
CMOS integrated circuits; II-VI semiconductors; cadmium compounds; compensation; leakage currents; low noise amplifiers; particle detectors; preamplifiers; readout electronics; semiconductor counters; zinc compounds; CMOS process; CSA; CdZnTe; DC voltage; adjustable leakage compensation; deep submicron process; equivalent noise charge; gate leakage; leakage compensation configuration; leakage current variation; low noise charge sensitive amplifier; particle detector readout; preamplifier output; size 0.18 mum; test chip; CMOS integrated circuits; MOSFET circuits; charge sensitive amplifier; gate leakage; particle detection; reset configuration;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713693
