Title :
4H-SiC Junction Barrier Schottky diode with embedded P-layer
Author :
Zhang, Yimen ; Zhang, Yuming ; Tang, Xiaoyan ; Wang, Yuehu ; Jia, Renxu ; Song, Qingwen ; Chen, Fengping
Author_Institution :
Nat. Defense Key Discipline Lab. of Wide Band-gap Semicond. Technol., Xidian Univ., Xi´´an, China
Abstract :
4H-SiC Junction Barrier Schottky diode with embedded P-layer (JBS-EPL) is reported in this paper. JBS-EPL has attractive advantages, such as remarkably increasing the breakdown voltage and decreasing the power loss and die area comparing with conventional Junction Barrier Schottky diode. The estimates for power loss and die area are proposed that can be used for evaluating the different structure design of power devices.
Keywords :
Schottky diodes; electric breakdown; power semiconductor diodes; silicon compounds; SiC; breakdown voltage; die area; embedded P-layer; junction barrier Schottky diode; power loss; Brain models; Educational institutions; Equations; Mathematical model; 4H-SiC; Junction Barrier Schottkey diode; power loss;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-9997-7
DOI :
10.1109/EDSSC.2010.5713714
