Title :
Design and on-wafer measurement of a W-Band via-less CPW RF probe pad to microstrip transition
Author :
Zheng, G. ; Kirby, P. ; Rodríguez, A. ; Papapolymerou, J. ; Tentzeris, M. ; Dunleavy, L.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A very wide band via-less coplanar waveguide RF probe pad to microstrip transition is presented. The simulation with Agilent´s Momentum (MOM) shows that a 3 dB bandwidth of 173% can be achieved from 10GHz to 110GHz with an average loss of 0.4dB, and 0.2dB at 70GHz. The fabrication was done on 100μm thick high resistivity silicon wafer, and two measurement methods were used to obtain the s-parameters of the transition. Measured results show that the insertion loss has an average value of 0.4dB from 40GHz to 100GHz, with the return loss better than 13dB.
Keywords :
S-parameters; coplanar waveguides; method of moments; microstrip circuits; microstrip transitions; microwave reflectometry; millimetre wave measurement; 10 to 110 GHz; S-parameters; W-Band vialess CPW RF probe; design rules; embedding network; high resistivity wafer; insertion loss; method of moments; on-wafer measurement; probe pad to microstrip transition; Bandwidth; Conductivity; Coplanar waveguides; Fabrication; Message-oriented middleware; Microstrip; Probes; Radio frequency; Waveguide transitions; Wideband;
Conference_Titel :
Microwave Conference, 2003. 33rd European
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMC.2003.1262318
