Title :
Indium phosphide solar cells: P+-N or N+-P?
Author :
Parrott, J.E. ; Potts, A.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Wales Coll. of Cardiff, UK
Abstract :
A modeling study has been carried out to determine whether p+ -n or n+-p InP solar cells give better performance. The physical model used was standard except that radiative recombination was modified to allow for photon recycling. The numerical model combined one-dimensional solutions of the transport equations with the Handy model for series resistance. The parameters optimized were: front SRV, emitter doping, emitter thickness, number, and width of grid fingers. Calculations were done with only radiative recombination in the bulk and with a state-of-art level of SRH (Schottky-Read-Hall) recombination. The results suggest that in the absence of SRH recombination p+-n with η=23.4% are better than n+-p with η=23.1%
Keywords :
III-V semiconductors; indium compounds; solar cells; Handy model; InP solar cells; Schottky-Read-Hall recombination; emitter doping; emitter thickness; front SRV; grid fingers; n+-p semiconductor; p+-n semiconductor; radiative recombination; series resistance; Indium phosphide; Materials reliability; Numerical models; Photovoltaic cells; Predictive models; Radiative recombination; Recycling; Reliability theory; Semiconductor device reliability; Semiconductor devices;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169200