Title :
High-efficiency heteroepitaxial InP solar cells
Author :
Wanlass, M.W. ; Coutts, T.J. ; Ward, J.S. ; Emery, K.A.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
High-efficiency, thin-film one-sun and concentrator InP solar cells grown on GaAs substrates are discussed. A novel, compositionally graded heterostructure is used to grow high-quality InP layers. One-sun cells have AM0 efficiencies as high as 13.7% at 25°C (equivalent to 15.7% under the global spectrum). For the concentrator cells at 25°C a peak conversion efficiency of 18.9% under 71.8 AM0 suns has been achieved. Under the direct spectrum, the equivalent efficiency is 21.0% at 88.1 suns. At 80°C, the peak AM0 efficiency is 15.7% at 75.6 suns. Temperature coefficient data for the concentrator cells are also presented. Approaches for further improving the cell performance are discussed
Keywords :
III-V semiconductors; indium compounds; semiconductor thin films; solar cells; solar energy concentrators; 13.7 to 21 percent; 25 to 80 degC; GaAs substrates; InP solar cells; compositionally graded heterostructure; concentrator solar cells; heteroepitaxial solar cells; temperature coefficient data; thin-film semiconductors; Chemical technology; Fabrication; Gallium arsenide; Indium phosphide; Lattices; Photovoltaic cells; Substrates; Sun; Thermal conductivity; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169201
