Title :
Performance analysis of Ti∶ LiNbO3 1×2 digital photonic switch with SiO2 buffer layer
Author :
Singh, Ghanshyam ; Yadav, R.P. ; Janyani, Vijay
Author_Institution :
Dept. of Electron. & Commun. Eng., Malaviya Nat. Inst. of Technol. Jaipur, Jaipur, India
Abstract :
We demonstrate a polarization and wavelength independent digital photonic switch with optimized on-chip area coverage and reduced driving voltage. A symmetrical SiO2 buffer layer was introduced between channel and electrode regions to optimize its thermal stability and to reduce absorption losses. Switching is achieved through adiabatic mode evolution in an asymmetric waveguide junction. The switch has been found satisfactory for THz operation with switching voltages in the range of ±18-to-21V and switch losses in the range of 0.50 to 0.75% only. A channel profile of titanium indiffused waveguide on an x-cut lithium niobate substrate is used for lightwave propagation.
Keywords :
buffer layers; light polarisation; light propagation; lithium compounds; optical losses; optical planar waveguides; optical switches; silicon compounds; thermal stability; titanium; LiNbO3:Ti-SiO2; absorption losses; adiabatic mode evolution; asymmetric waveguide junction; channel profile; lightwave propagation; optimized on-chip area coverage; polarization independent digital photonic switch; reduced driving voltage; switch losses; symmetrical buffer layer; thermal stability; voltage 18 V to -21 V; wavelength independent digital photonic switch; Digital optical switch; Titanium indiffusion in lithium niobate; buffer layer; switching characteristic;
Conference_Titel :
Mechanical and Electrical Technology (ICMET), 2010 2nd International Conference on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-8100-2
Electronic_ISBN :
978-1-4244-8102-6
DOI :
10.1109/ICMET.2010.5598334
