DocumentCode
2523959
Title
Infrared detection of carrier dynamics in indium antimonide in megagauss fields
Author
Hansel, S. ; Kirste, Alexander ; Mueller, H.-U. ; von Ortenberg, M. ; Huseynov, E.
Author_Institution
Humboldt-Univ., Berlin, Germany
fYear
2002
fDate
26-26 Sept. 2002
Firstpage
171
Lastpage
172
Abstract
We report on magnetotransmission measurements of 10.6 μm radiation through bulk InSb in transient megagauss field pulses. The half period of about 6 μs of the oscillating field is comparable to the characteristic relaxation time in the material. Field reversal between the oscillations demonstrates the strong influence of the "history" of the state population within the relaxation time.
Keywords
III-V semiconductors; carrier mobility; indium compounds; infrared detectors; infrared spectra; magnetic field effects; relaxation; 10.6 micron; 6 mus; InSb; bulk InSb; characteristic relaxation time; field reversal; magnetotransmission measurements; oscillating field; state population; transient megagauss field pulses; Chromium; Cyclotrons; History; Impurities; Infrared detectors; Magnetic field measurement; Magnetic fields; Magnetic materials; Magnetic resonance; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-7423-1
Type
conf
DOI
10.1109/ICIMW.2002.1076139
Filename
1076139
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