Photon emission from SOI MOSFET with body terminal

Author

Koyanagi, M. ; Matsumoto, T. ; Shimatani, T. ; Balestera, F. ; Hiruma, Y. ; Okabe, M. ; Inoue, Y.

Author_Institution

Dept. of Machine Intelligence & Syst. Eng., Tohoku Univ., Sendai, Japan

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

944

Lastpage

947

Abstract

The impact ionization phenomenon in SOI MOSFET is investigated by evaluating the photon emission characteristics and the body terminal current in the devices with body terminal. It is clearly shown by measuring them simultaneously that the body terminal current in SOI MOSFET indicates only a part of impact ionization current in the depletion mode and furthermore the silicon film potential is changed along the channel width by the body terminal in the accumulation mode. In addition, it is found that the impact ionization occurs both at the front surface and the back surface of the silicon film in the depletion mode. The impact ionization at the back surface is observed at the lower gate voltage than that at the front surface.<>

Keywords

MOSFET; electric current measurement; impact ionisation; silicon-on-insulator; thin film transistors; SOI MOSFET; accumulation mode; back surface; body terminal; body terminal current; channel width; depletion mode; front surface; impact ionization; impact ionization current; impact ionization phenomenon; lower gate voltage; photon emission; photon emission characteristics; silicon film potential; thin film transistors; Current measurement; Hot carrier effects; Impact ionization; Intelligent systems; MOSFET circuits; Semiconductor films; Silicon; Substrates; Systems engineering and theory; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383255

Filename

383255