Characterization and modeling of substrate trapping in HEMTs

Author

Rathmell, James G. ; Parker, Anthony E.

Author_Institution

Sydney Univ., Sydney

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

64

Lastpage

67

Abstract

We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques. This model accounts for the observed variation of extent of gate lag with bias and step potentials, and the variation of gate-lag time constant with drain potential. Because both charge capture and emission are accounted for, the model is appropriate for the simulation of both large-signal and small-signal dynamics. The model is verified by comparison with large-signal transient measurements and is consistent with small-signal gain measurements.

Keywords

high electron mobility transistors; microwave field effect transistors; semiconductor device models; transient response; HEMT; charge capture; charge emission; drain potential; gate-lag time constant; large-signal transient measurements; microwave FET; pulse techniques; semiconductor charge-carrier process; substrate trapping; transient response; Electron traps; FETs; Gain measurement; Gallium arsenide; HEMTs; Impact ionization; Integrated circuit modeling; MODFETs; Pulse measurements; Substrates; Index Terms; Microwave FET; semiconductor charge-carrier processes; semiconductor device measurements; semiconductor device modeling; transient response;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412648

Filename

4412648