Title :
Si/Si/sub 1-x-y/Ge/sub x/C/sub y/Si heterojunction bipolar transistors
Author :
Lanzerotti, L.D. ; St.Amour, A. ; Liu, C.W. ; Sturm, J.C.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
Recently great interest in silicon-based heterojunction devices has been caused by high-speed Si/sub 1-x/Ge/sub x/ base HBTs with f/sub t/ exceeding I00 GHz. To extend silicon heterojunction technology beyond strained Si/sub 1-x/Ge/sub x/,, several groups have pursued Si/sub 1-x-y/Ge/sub x/C/sub y/ alloys, which are ofinterest because carbon is expected to allow the possibility of strain-free silicon heterostructures which will eliminate a major constraint on device design. Several groups have succeeded in growing strain compensated Si/sub 1-x-y/Ge/sub x/C/sub y/ layers on silicon, but to date there have been no Si/sub 1-x-y/Ge/sub x/C/sub y/ electrical devices of any kind or experimental bandgap studies reported. In this paper we present the first electrical devices of any kind containing Si/sub 1-x-y/Ge/sub x/C/sub y/ alloys and present preliminary measurements of Si/sub 1-x-y/Ge/sub x/C/sub y/ bandgaps. Temperature studies of these HBT devices indicate that the partially strain compensated Si/sub 1-x-y/Ge/sub x/C/sub y/ bandgap remains comparable to the bandgap of strained Si/sub 1-x/Ge/sub x/, a most surprising and fortuitous result.<>
Keywords :
Ge-Si alloys; elemental semiconductors; energy gap; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor growth; semiconductor materials; silicon; vapour phase epitaxial growth; 100 GHz; Si-SiGeC-Si; Si/sub 1-x-y/Ge/sub x/C/sub y/ alloys; bandgap study; heterojunction bipolar transistors; high-speed HBTs; strain compensated SiGeC layers; strain-free Si heterostructures; Capacitive sensors; Chemical vapor deposition; Distributed control; Electric variables measurement; Epitaxial layers; Heterojunction bipolar transistors; Photonic band gap; Silicon alloys; Temperature; X-ray scattering;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383260