Title :
Modeled performance of monolithic, 3-terminal InP/Ga0.47In0.5As concentrator solar cells as a function of temperature and concentration ratio
Author :
Osterwald, C.R. ; Wanlass, M.W. ; Ward, J.S. ; Keyes, B.M. ; Emery, K.A. ; Coutts, T.J.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
Using measured device parameters from a monolithic three-terminal InP/GaInAs (0.75 eV) tandem concentrator solar cell, a numerical model has been constructed that calculates efficiency as a function of temperature and concentration ratio. The device measurements indicate that the series resistance in the InP top cell severely limits the maximum efficiency at high concentration ratios. Results from the model in which a single-junction InP concentrator solar cell that has a lower resistance by a factor of six was substituted for the top cell show that peak 20°C air mass zero (AM0) efficiencies should approach 30% at concentration ratios greater than 100. At 80°C, this tandem cell should exceed 24% AM0 efficiency
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; solar cells; solar energy concentrators; 20 degC; 24 percent; 30 percent; 80 degC; InP-Ga0.47In0.5As solar cells; air mass zero efficiencies; concentration ratio; efficiency; monolithic 3-terminal solar cells; semiconductor; tandem concentrator solar cell; temperature ratio; Current measurement; Electrical resistance measurement; Indium phosphide; Lighting; Numerical models; Photoluminescence; Photonic band gap; Photovoltaic cells; Shape measurement; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169211
