Title :
A Broadband GaN-MMIC power amplifier for L to X Bands
Author :
Meliani, C. ; Behtash, R. ; Würfl, J. ; Heinrich, W. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hoechstfrequenztech., Berlin
Abstract :
A broadband GaN monolithic power amplifier covering the L to X bands is presented as is required for various applications in measurement set-ups and multi-band systems. It is based on 8 transistor cells with 4 times 50 mm gate width each following the distributed amplifier concept. The amplifier achieves 10 dB broadband small-signal gain and a 3 dB cut-off frequency of 11 GHz. The circuit delivers between 1.4 and 2.2 W over the bandwidth from 2 GHz up to 10 GHz. At the maximum output power a PAE higher than 20% is achieved.
Keywords :
III-V semiconductors; MMIC amplifiers; UHF amplifiers; gallium compounds; wide band gap semiconductors; wideband amplifiers; GaN; broadband MMIC power amplifier; frequency 2 GHz to 10 GHz; monolithic power amplifier; multiband systems; Bandwidth; Broadband amplifiers; Circuits; Cutoff frequency; Distributed amplifiers; Gain; Gallium nitride; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412669
