DocumentCode :
2525126
Title :
Novel ultra low voltage semi floating-gate passband transconductance amplifier
Author :
Berg, Y.
Author_Institution :
Dept. of Inf., Univ. of Oslo, Oslo, Norway
fYear :
2010
fDate :
26-28 April 2010
Firstpage :
286
Lastpage :
289
Abstract :
An ultra low voltage differential transconductance amplifier based on clocked binary and analog inverters is presented. Supply voltages down to 250mV can be applied. Clocked semi-floating-gate binary inverters used for ultra low voltage digital logic are exploted to obtain analog inverting gates. The ultra low voltage amplifier perform a passband operation where the passband is dependent on the applied current level. The gates used resemble precharge CMOS logic where the current level is determined by offset voltages and the precharge level is determined by the supply voltage provided by the clock signals applied. Simulated data presented are valid for a 90nm STM CMOS process.
Keywords :
CMOS logic circuits; amplifiers; analogue circuits; band-pass filters; clocks; logic gates; low-power electronics; CMOS logic; analog inverting gates; clock signal; clocked binary inverter; offset voltage; precharge level; size 90 nm; supply voltage; ultra low voltage differential transconductance amplifier; ultra low voltage digital logic; ultra low voltage semi floating-gate passband transconductance amplifier; Analog circuits; CMOS logic circuits; CMOS technology; Clocks; Differential amplifiers; Inverters; Low voltage; Passband; Transconductance; Variable structure systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference
Conference_Location :
Valletta
Print_ISBN :
978-1-4244-5793-9
Type :
conf
DOI :
10.1109/MELCON.2010.5476281
Filename :
5476281
Link To Document :
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