A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation

Author

Assaderaghi, F. ; Sinitsky, D. ; Parke, S. ; Bokor, J. ; Ko, P.K. ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

809

Lastpage

812

Abstract

To extend the lower bound of power supply to ultra-low voltages (0.6 V and below), we propose a dynamic-threshold voltage MOSFET (DTMOS) built on silicon-on-insulator (SOI). The threshold voltage of DTMOS drops as the gate voltage is raised, resulting in a much higher current drive than standard MOSFET at low power supply voltages. On the other hand, V/sub t/ is high at V/sub gs/=0, therefore the leakage current is low. We provide experimental results and 2-D device and mixed-mode simulations to analyze DTMOS and compare its performance with a standard MOSFET. These results verify excellent DC inverter characteristics down to V/sub dd/=0.2 V, and good ring oscillator performance down to 0.3 V for DTMOS.<>

Keywords

CMOS analogue integrated circuits; MOSFET; digital simulation; invertors; power supplies to apparatus; silicon-on-insulator; 0.2 V; 0.3 V; 0.6 V; DC inverter characteristics; DTMOS; dynamic threshold voltage MOSFET; gate voltage; good ring oscillator performance; leakage current; low power supply voltages; mixed-mode simulations; much higher current drive; silicon-on-insulator; threshold voltage; ultra-low voltage operation; Analytical models; Inverters; Leakage current; Low voltage; MOSFET circuits; Performance analysis; Power MOSFET; Power supplies; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383301

Filename

383301