28 nm FD SOI Technology Platform RF FoM

Author

Esfeh, B.K. ; Kilchytska, V. ; Barral, V. ; Planes, N. ; Haond, M. ; Flandre, D. ; Raskin, J.-P.

Author_Institution

ICTEAM, Univ. catholique de Louvain, Louvain-la-Neuve, Belgium

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

This work provides a detailed study of 28 nm fully-depleted silicon-on-insulator (FD SOI) ultra-thin body and buried oxide (BOX) (UTBB) MOSFETs for high frequency applications. RF figures of merit (FoM), i.e. the current gain cut-off frequency (f_T) and the maximum oscillation frequency (f_max), are presented for different transistor geometries. The parasitic gate and source/drain series resistances, as well as capacitances and their effect on RF performance are analyzed.

Keywords

MOSFET; silicon-on-insulator; BOX UTBB metal oxide semiconductor field effect transistor; FD SOI technology platform; RF FoM; current gain cut-off frequency; fully-depleted silicon-on-insulator; high frequency application; oscillation frequency; parasitic gate; radiofrequency figure of merit; size 28 nm; source-drain series resistance; transistor geometry; ultrathin body and buried oxide MOSFET; Capacitance; Equivalent circuits; Fingers; Logic gates; MOSFET; Market research; Radio frequency; FD-SOI MOSFET; RF FIGURES OF MERIT; UTBB;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE

Conference_Location

Millbrae, CA

Type

conf

DOI

10.1109/S3S.2014.7028208

Filename

7028208