Linearity and efficiency optimisation in microwave power amplifier design

Author

Colantonio, P. ; Giannini, F. ; Limiti, E. ; Nanni, A. ; Camarchia, V. ; Teppati, V. ; Pirola, M.

Author_Institution

Univ. di Roma Tor Vergata, Rome

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

283

Lastpage

286

Abstract

In this contribution the minimisation of asymmetry between lower and upper side band intermodulation products will be discussed, starting from a Volterra analysis approach. Base-band and harmonic device terminations effects will be analysed, identifying novel conditions minimising IMD asymmetry and IM₃, power levels. Such conditions, not relying on base-band terminations, are the basis for IM₃, products minimisation via second harmonic load selection. The proposed criterion is then verified by harmonic load-pull measurements on a GaN HEMT under two-tone excitation. Measurements agree with the analysis, demonstrating a null IMD asymmetry and 6 dBc increase in C/I,, without affecting output power (34 dBm @ 1dB compression) and power added efficiency performance (65% @ 1 dB compression).

Keywords

III-V semiconductors; Volterra equations; gallium compounds; high electron mobility transistors; intermodulation; microwave power amplifiers; wide band gap semiconductors; GaN; HEMT; Volterra analysis approach; harmonic device terminations; harmonic load selection; harmonic load-pull measurements; intermodulation products; linearity-efficiency optimisation; microwave power amplifier design; products minimisation; Design optimization; Gallium nitride; HEMTs; Harmonic analysis; Linearity; Microwave amplifiers; Microwave devices; Power amplifiers; Power measurement; Power system harmonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412704

Filename

4412704