Title :
UTBB/FDSOI: Reasons for a success
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
We have presented the reasons of a success story for the 2D FDSOI Technology that has started at 28 nm and will continue through the 10 nm node. Competitive performance and power control is demonstrated. It is also experiencing the use of Back Biasing both for performance boost as well as for adequate Process compensation allowing reaching a tighter process control that has become key for these advanced nodes.
Keywords :
CMOS integrated circuits; silicon-on-insulator; 2D process legacy; CMOS; FDSOI technology; UTBB; performance boost; power control; CMOS integrated circuits; MOS devices; Performance evaluation; Process control; Silicon; Three-dimensional displays; Very large scale integration;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location :
Millbrae, CA
DOI :
10.1109/S3S.2014.7028212
