DocumentCode
2525485
Title
Infrared spin orientation and spin-galvanic effect in semiconductor heterostructures
Author
Ganichev, S.D. ; Prettl, W.
Author_Institution
Regensburg Univ., Germany
fYear
2002
fDate
26-26 Sept. 2002
Firstpage
321
Lastpage
322
Abstract
It is shown that a homogeneous spin-polarized electron gas in semiconductor heterostructures can drive an electric current. Here we report on this spin-galvanic effect where the spin polarization has been achieved by optical orientation applying circularly polarized far-infrared laser radiation. The microscopic origin-of the effect is an inherent asymmetry of spin-flip scattering.
Keywords
electron spin polarisation; light polarisation; photoconductivity; semiconductor heterojunctions; semiconductor quantum wells; two-dimensional electron gas; IR spin orientation; asymmetric spin-flip scattering; circularly polarized FIR laser radiation; electric current; far-infrared laser radiation; homogeneous spin-polarized electron gas; optical orientation; quantum wells; semiconductor heterostructures; spin polarization; spin-galvanic effect; Charge carrier processes; Current; Electron optics; Gas lasers; Geometrical optics; Heterojunctions; Microscopy; Optical polarization; Photovoltaic effects; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-7423-1
Type
conf
DOI
10.1109/ICIMW.2002.1076214
Filename
1076214
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