Title :
Nitrogen in-situ doped poly buffer LOCOS: simple and scalable isolation technology for deep-submicron silicon devices
Author :
Kobayashi, T. ; Nakayama, S. ; Miyake, M. ; Okazaki, Y.
Author_Institution :
NTT LSI Labs., Atsugi, Japan
Abstract :
Novel LOCOS (LOCal Oxidation of Silicon) technology has been developed, that uses nitrogen in-situ doped amorphous-Si as a buffer layer instead of the non-doped poly-Si used in conventional Poly Buffered LOCOS (PBL). This technology makes it possible to use a thin pad oxide of 6 nm and improves edge morphology and effective dimension loss. Therefore, the technology will be used in advanced LSI fabrication with KrF lithography, notwithstanding that the number of processing steps is the same as conventional PBL.<>
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit technology; isolation technology; nanotechnology; oxidation; 6 nm; KrF lithography; LSI fabrication; Si:N-SiO/sub 2/; buffer layer; deep-submicron CMOS; doped amorphous-Si; edge morphology; effective dimension loss; electrical isolation characteristics; in-situ N doping; junction integrity; n-channel MOSFET; p-channel MOSFET; poly buffer LOCOS; scalable isolation technology; thin pad oxide; Buffer layers; CMOS technology; Costs; Etching; Fabrication; Isolation technology; Large scale integration; Nitrogen; Oxidation; Silicon;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383320
