Title :
Sample preparation for electron beam testing with reactive ion etching
Author :
Numajiri, Takaaki ; Suzuki, Satoshi ; Omata, Tomoya ; Yoshida, Naoki ; Tsujita, Yoichi
Author_Institution :
System ASIC Div., NEC Corp., Tokyo, Japan
Abstract :
A practical sample preparation procedure for electron beam (EB) testing using reactive ion etching (RIE) has been developed. By highly accurate anisotropic dry etching, metal wires below dielectric layers can be exposed while successfully maintaining the electrical performance of the LSI. Applying this technique to actual EB tester analysis on specimens with multi-layer metal lines, clear voltage contrast images can be obtained. This preparation procedure greatly reduces the difficulties of acquiring EB contrast images and enables effective failure analysis with fast TAT
Keywords :
electron beam applications; electron beam testing; failure analysis; integrated circuit testing; large scale integration; specimen preparation; sputter etching; LSI; anisotropic dry etching; dielectric layer; electron beam testing; failure analysis; metal wire; multilayer metal line; reactive ion etching; sample preparation; voltage contrast image; Anisotropic magnetoresistance; Dielectrics; Dry etching; Electron beams; Failure analysis; Image analysis; Large scale integration; Testing; Voltage; Wires;
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
DOI :
10.1109/IPFA.1997.638121
