• DocumentCode
    252589
  • Title

    Recent advances and future trends in SOI for RF applications

  • Author

    Joshi, A. ; Tzung-yin Lee ; Yuh-yue Chen ; Whitefield, D.

  • Author_Institution
    Skyworks Solutions Inc., Irvine, CA, USA
  • fYear
    2014
  • fDate
    6-9 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In recent years, RFCMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in wireless applications. Requirements of lower insertion loss, better isolation and better linearity have driven RFCMOS-SOI roadmap. Ron*Coff, a key figure-of-merit for switch application, has scaled from > 300fs to <; 200fs. In this paper, we review commonly adopted techniques to further improve Ron*Coff, along with their limitations.
  • Keywords
    CMOS integrated circuits; isolation technology; radiofrequency integrated circuits; silicon-on-insulator; RFCMOS; SOI substrates; figure-of-merit; insertion loss; isolation technology; silicon-on-insulator; switch application; Capacitance; Field effect transistors; Radio frequency; Resistance; Silicon; Silicon-on-insulator; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
  • Conference_Location
    Millbrae, CA
  • Type

    conf

  • DOI
    10.1109/S3S.2014.7028235
  • Filename
    7028235
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=252589