• DocumentCode
    252592
  • Title

    Impact of ultra-low voltages on single-event transients and pulse quenching

  • Author

    Ahlbin, J.R. ; Gadfort, P.

  • Author_Institution
    Inf. Sci. Inst., Univ. of Southern California, Arlington, VA, USA
  • fYear
    2014
  • fDate
    6-9 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Single-event transients (SET) and pulse quenching are analyzed at sub-Vt and super-Vt voltage levels. Two different inverter designs are simulated for their single-event response. These simulations show that SET pulse widths become longer with decreasing voltage for the inverter designed to work at sub-Vt voltage levels. Additionally, pulse quenching becomes significant between 0.5 V and 0.7 V for the standard 2-T inverter.
  • Keywords
    invertors; radiation hardening (electronics); SET pulse widths; inverter designs; pulse quenching; single-event response; single-event transients; standard 2-T inverter; sub-Vt voltage levels; super-Vt voltage levels; ultra-low voltages; Integrated circuit modeling; Inverters; MOSFET; Solid modeling; Standards; Transient analysis; charge sharing; low-power; single events; single-event transient; single-event upset; soft errors; sub-threshold;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
  • Conference_Location
    Millbrae, CA
  • Type

    conf

  • DOI
    10.1109/S3S.2014.7028237
  • Filename
    7028237
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=252592