Determination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effects

A new method to determine ultra-thin gate oxide thicknesses of advanced CMOS devices from C-V characteristics is proposed. The method is based on numerical solutions of the Poisson equation including a first order correction for quantum mechanical effects. Unlike the commonly used C-V methods, this new approach results in a unique value of the gate oxide thickness independent of bias. An efficient and accurate gate oxide thickness determination that is suitable for automatic test procedures is achieved.<>