Smart co-integration of light sensitive layers with FDSOI transistors for More than Moore applications

Author

Grenouillet, L. ; De Salvo, B. ; Brunet, L. ; Coignus, J. ; Tabone, C. ; Mazurier, J. ; Le Royer, C. ; Grosse, P. ; Jaud, M.A. ; Rivallin, P. ; Chalupa, Z. ; Rozeau, O. ; Faynot, O. ; Vinet, M.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1

Lastpage

2

Abstract

We demonstrate for the first time that FDSOI technology can be turned into an integrated light-sensitive device technology capable of detecting or interacting with light. By designing a dedicated diode below the BOX, light absorption induced V_T shifts as large as 100mV and saturation drain current modulation of 70% are measured for the transistors above the BOX. Those experimental results are supported by TCAD simulations and pave the way to More than Moore applications for FDSOI technology.

Keywords

integrated optoelectronics; silicon-on-insulator; BOX; FDSOI transistor; More than Moore application; TCAD simulation; buried oxide; fully depleted silicon-on-insulator technology; integrated light-sensitive device technology; light absorption; light sensitive layer; saturation drain current modulation; smart cointegration; voltage shift; Absorption; Lighting; Logic gates; Modulation; Silicon; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE

Conference_Location

Millbrae, CA

Type

conf

DOI

10.1109/S3S.2014.7028245

Filename

7028245