Title :
Surface melting model for Al reflow into submicron contact-holes and vias
Author :
Hirose, K. ; Kikuta, K. ; Yoshida, T.
Author_Institution :
ULSI Device Dev. Lab. NEC Corp., Kanagawa, Japan
Abstract :
A new simulation model for Al reflow into submicron contact-holes and vias is developed for the first time. This model, the surface melting model, introduces surface tension driven mass transport of Al in a surface reflow layer whose thickness depends on the reflow temperature. Using this model in a quasi-3D computational fluid dynamics code, evolution of 3D Al surface topography during the reflow is accurately predicted from the initial Al step coverage and window curvature for a contact-hole. This physically based simulation identifies nature of the Al reflow.<>
Keywords :
aluminium; fluid dynamics; integrated circuit metallisation; melting; semiconductor process modelling; simulation; surface tension; surface topography; 3D Al surface topography; Al; Al reflow; Al step coverage; quasi-3D computational fluid dynamics code; reflow temperature; simulation model; submicron contact-holes; submicron vias; surface melting model; surface tension driven mass transport; window curvature; Artificial intelligence; Computational fluid dynamics; Computational modeling; National electric code; Semiconductor device modeling; Stress; Surface tension; Surface topography; Temperature dependence; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383346