DocumentCode
252695
Title
Stochastic wire-length model with TSV placement on periphery area
Author
Jianhui Ling ; Huiyun Li ; Guoqing Xu ; Liying Xiong
Author_Institution
Shenzhen Inst. of Adv. Technol., Chinese Univ. of Hong Kong, Shenzhen, China
fYear
2014
fDate
3-5 Dec. 2014
Firstpage
5
Lastpage
10
Abstract
Despite of numerous advantages of three dimensional integrated circuits (3D-ICs), their commercial success remains limited. The reason lies, in part, on the lack of physical design tools about Through-Silicon-Vias (TSVs) and 3D die stacking. In this paper, we propose a novel TSV placement method on the periphery of the dies. Based on this method, we derive a novel mathematical model to estimate 3D-IC wire-length and area with TSVs before floor-planning. We analyze the impact of TSVs on silicon area and wire-length. A case study with ISCAS benchmark circuits demonstrates that the proposed TSV placement method reduces the chip area and alleviates the reliability issues.
Keywords
benchmark testing; integrated circuit layout; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; three-dimensional integrated circuits; 3D die stacking; 3D-IC wire-length; ISCAS benchmark circuits; TSV placement; floor-planning; reliability; stochastic wire-length model; through-silicon-vias; Estimation; Logic gates; Sockets; Stacking; Standards; System-on-chip; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC), 2014 IEEE 16th
Conference_Location
Singapore
Type
conf
DOI
10.1109/EPTC.2014.7028291
Filename
7028291
Link To Document