• DocumentCode
    252695
  • Title

    Stochastic wire-length model with TSV placement on periphery area

  • Author

    Jianhui Ling ; Huiyun Li ; Guoqing Xu ; Liying Xiong

  • Author_Institution
    Shenzhen Inst. of Adv. Technol., Chinese Univ. of Hong Kong, Shenzhen, China
  • fYear
    2014
  • fDate
    3-5 Dec. 2014
  • Firstpage
    5
  • Lastpage
    10
  • Abstract
    Despite of numerous advantages of three dimensional integrated circuits (3D-ICs), their commercial success remains limited. The reason lies, in part, on the lack of physical design tools about Through-Silicon-Vias (TSVs) and 3D die stacking. In this paper, we propose a novel TSV placement method on the periphery of the dies. Based on this method, we derive a novel mathematical model to estimate 3D-IC wire-length and area with TSVs before floor-planning. We analyze the impact of TSVs on silicon area and wire-length. A case study with ISCAS benchmark circuits demonstrates that the proposed TSV placement method reduces the chip area and alleviates the reliability issues.
  • Keywords
    benchmark testing; integrated circuit layout; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; three-dimensional integrated circuits; 3D die stacking; 3D-IC wire-length; ISCAS benchmark circuits; TSV placement; floor-planning; reliability; stochastic wire-length model; through-silicon-vias; Estimation; Logic gates; Sockets; Stacking; Standards; System-on-chip; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC), 2014 IEEE 16th
  • Conference_Location
    Singapore
  • Type

    conf

  • DOI
    10.1109/EPTC.2014.7028291
  • Filename
    7028291