DocumentCode :
2526961
Title :
A monolithic RMS-DC converter using planar diaphragm structures
Author :
Yoon, E. ; Wise, K.D.
Author_Institution :
Solid-State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
fYear :
1989
fDate :
3-6 Dec. 1989
Firstpage :
491
Lastpage :
494
Abstract :
A monolithic RMS-DC converter for measuring wideband RMS signals is presented. Two identical thermoelements for thermal RMS-DC conversion are formed using planar diaphragm structures and micromachined dielectric windows. Each thermoelement consists of two polysilicon heaters and a thin-film temperature sensor located on a window and operated at constant temperature using on-chip control feedback circuitry. The thermoelements achieve a thermal efficiency greater than 7 degrees C/mW with thermal time constant less than 5 ms. The on-chip control circuitry is realized using a standard 3- mu m p-well CMOS process with minor modifications for process compatibility with the dielectric window formation. This converter measures RMS signals over a full scale range of 1 V RMS, handles crest factors in excess of five, exhibits a typical nonlinearity of less than 1%, and achieves a 3-dB bandwidth greater than 20 MHz.<>
Keywords :
CMOS integrated circuits; convertors; diaphragms; electric sensing devices; micromechanical devices; signal processing equipment; thermal variables measurement; 3 micron; bandwidth; constant temperature; crest factors; dielectric window formation; micromachined dielectric windows; monolithic RMS-DC converter; nonlinearity; on-chip control feedback circuitry; p-well CMOS process; planar diaphragm structures; polysilicon; polysilicon heaters; process compatibility; thermal RMS-DC conversion; thermal efficiency; thermal time constant; thermoelements; thin-film temperature sensor; wideband RMS signals; Bandwidth; CMOS process; Dielectric measurements; Dielectric thin films; Feedback circuits; Temperature control; Temperature sensors; Thin film circuits; Thin film sensors; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0817-4
Type :
conf
DOI :
10.1109/IEDM.1989.74328
Filename :
74328
Link To Document :
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