Title :
MOS device reliability studies under LabVIEW environment
Author :
Martin, M.G. ; Paulsen, R.E. ; White, M.H.
Author_Institution :
Sherman Fairchild Center for Solid State Studies, Lehigh Univ., Bethlehem, PA, USA
Abstract :
The suitability of the LabVIEW system for a device research laboratory is evaluated. The system is applied successfully to the study of MOS device reliability with the highly repetitive measurement technique of charge pumping. Interface and near-interface oxide trap generation due to hot electron injection from a vertical field injection structure is characterized with the developed software.<>
Keywords :
MIS devices; electron traps; hot carriers; semiconductor device reliability; semiconductor device testing; LabVIEW environment; MOS device; charge pumping; device reliability studies; device research laboratory; hot electron injection; oxide trap generation; repetitive measurement technique; vertical field injection structure; Charge measurement; Charge pumps; Current measurement; Instruments; Laboratories; MOS devices; Software systems; Solid state circuits; Test equipment; Testing;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383426
