Title :
Improved MOCVD technology in high throughput high efficiency GaAs/Ge solar cell manufacture
Author :
Cheng, C.H. ; Yeh, Y.C.M. ; Chu, C.L. ; Ou, T.
Author_Institution :
Applied Solar Energy Corp., City of Industry, CA, USA
Abstract :
GaAs/Ge (inactive germanium) solar cells (8 cm2) grown on a 0.2 mm thick Ge substrates has been space qualified and produced in a large-scale production environment (>2000 8 cm2 cells/week). AMO efficiencies over 20% have been demonstrated for areas up to 6 cm×6 cm, A detailed discussion is given on MOCVD technology improvements made in high throughput GaAs solar cell manufacture. Results showing the consistency of layer composition and quality on several different cell structures are presented
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; solar cells; vapour deposited coatings; GaAs-Ge solar cells; MOCVD technology; large-scale production environment; layer composition; semiconductor; Costs; Gallium arsenide; Inductors; MOCVD; Manufacturing; Photovoltaic cells; Production; Solar energy; Testing; Throughput;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169245
