FIB precision TEM sample preparation using carbon replica

Author

Sheng, T.T. ; Goh, G.P. ; Tung, C.H. ; Wang, John L F ; Cheng, Jeng Kou

Author_Institution

Inst. of Microelectron., Nat. Univ. of Singapore, Singapore

fYear

1997

fDate

21-25 Jul 1997

Firstpage

92

Lastpage

96

Abstract

A new precision transmission electron microscopy (XTEM) sample preparation method was developed and reported here. No mechanical polishing and grinding are needed. The main difference of this method over conventional method using focused ion beam (FIB) is that the sample sectioned with FIB can be extracted directly from the wafer site and transferred to a carbon supporting film for TEM examination. With this technique, a cross section TEM sample can be prepared easily and quickly, thus enhancing both productivity and turnaround time

Keywords

failure analysis; focused ion beam technology; integrated circuit reliability; integrated circuit testing; specimen preparation; transmission electron microscopy; IC testing; cross section TEM sample; failure analysis; focused ion beam; precision transmission electron microscopy; productivity; sample preparation; sample sectioning; turnaround time; wafer site; Failure analysis; Humans; Ion beams; Ion sources; Microelectronics; Milling; Platinum; Protection; Sputter etching; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638150

Filename

638150