Fabrication of VGA size near-infrared image sensor using room-temperature flip-chip bonding technology

Author

Shuto, T. ; Iwanabe, K. ; Ogura, M. ; Nishida, K. ; Asano, T.

Author_Institution

Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan

fYear

2014

fDate

3-5 Dec. 2014

Firstpage

536

Lastpage

539

Abstract

Room-temperature bonding technique using cone-shaped microbumps with the aid of ultrasonic vibration is applied to the fabrication of a near-infrared image sensor. The image sensor is fabricated using the flip-chip bonding of an InGaAs/InP photodiode-array chip and a Si CMOS readout IC chip. The pixel pitch is 15 μm to compose VGA class (640 × 512 pixels) resolution. High-quality imaging of a heated object and blood vessels of human hand is demonstrated.

Keywords

CMOS integrated circuits; elemental semiconductors; flip-chip devices; gallium arsenide; image sensors; indium compounds; integrated circuit bonding; photodiodes; readout electronics; silicon; CMOS readout IC chip; InGaAs-InP; Si; VGA class resolution; VGA size near-infrared image sensor fabrication; blood vessels; flip-chip bonding technology; heated object; high-quality imaging; human hand; photodiode-array chip; temperature 293 K to 298 K; ultrasonic vibration; Acoustics; Arrays; Bonding; Gold; Image sensors; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference (EPTC), 2014 IEEE 16th

Conference_Location

Singapore

Type

conf

DOI

10.1109/EPTC.2014.7028408

Filename

7028408