Title :
High temperature compatible aluminum nitride resonating strain sensor
Author :
Goericke, F.T. ; Chan, M.W. ; Vigevani, G. ; Izyumin, I. ; Boser, B.E. ; Pisano, A.P.
Author_Institution :
Dept. of Mech. Eng., Univ. of California, Berkeley, CA, USA
Abstract :
Aluminum nitride (AlN) is a promising material for harsh environment sensing applications due to its piezoelectric effect and mechanical stability at high temperatures. In this work, AlN double-ended tuning forks (DETF) are presented as a transduction element to measure mechanical loads by observing the resonance frequency shift. The fabrication process of the MEMS devices including the bonding step to a steel parallel is described. Device operation is demonstrated for strain sensing up to 91 °C and operation of the transducer without applied strain is demonstrated up to 570 °C.
Keywords :
III-V semiconductors; aluminium compounds; mechanical stability; micromechanical devices; piezoelectricity; strain sensors; wide band gap semiconductors; AlN; MEMS device; double-ended tuning fork; mechanical load measurement; mechanical stability; piezoelectric effect; resonance frequency shift; strain sensor; transduction element; Frequency measurement; Micromechanical devices; Resonant frequency; Silicon; Strain; Temperature measurement; Temperature sensors; aluminum nitride; double-ended tuning fork; high temperature; strain sensing;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969198
