Title :
Large-signal resonant tunneling diode model for SPICE3 simulation
Author :
Kuo, T.-H. ; Lin, H.C. ; Anandakrishnan, U. ; Potter, R.C. ; Shupe, D.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
The I-V characteristics of a multipeak resonant tunneling diode (RTD) are analyzed. A large signal model is developed so that the multipeak RTD can be used with the SPICE3 circuit simulation program. The simulated result of a 4-b A/D (analog-to-digital) converter using this model is shown. It is noted that the model can be used with existing SPICE3 device models to simulate the performance of complex circuits that contain resonant tunneling diodes.<>
Keywords :
circuit analysis computing; resonant tunnelling devices; semiconductor device models; tunnel diodes; I-V characteristics; SPICE3 simulation; circuit simulation program; large signal model; multipeak RTD; resonant tunneling diode; Aerospace simulation; Analytical models; Circuit simulation; Diodes; Educational institutions; Frequency; RLC circuits; Resonance; Resonant tunneling devices; Voltage;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74346
