Thermal conductivity of Si/Ge quantum dot superlattices

Author

Khitun, Alexander ; Liu, Jianlin ; Wang, Kang L.

Author_Institution

Electr. Eng. Dept., California Univ., Los Angeles, CA, USA

fYear

2004

fDate

16-19 Aug. 2004

Firstpage

20

Lastpage

22

Abstract

We present both theoretical and experimental study of the lattice thermal conductivity in Si/Ge quantum dot superlattices (QDS). Our developed formalism takes into account thermal phonon scattering on quantum dots and allows us to predict with good accuracy (∼5%) lattice thermal conductivity modification in QDS compared to the bulk material. According to the theoretical model, the design of quantum dot composition, size and arrangement may be used for the effective control of QDS thermal properties. The results of numerical simulations are in a good agreement with experimental data obtained for Si/Ge QDS. The developed formalism is applicable for a wide range of semiconductor QDSs.

Keywords

elemental semiconductors; germanium; numerical analysis; phonons; semiconductor quantum dots; semiconductor superlattices; silicon; thermal conductivity; Si-Ge; Si-Ge quantum dot superlattices; lattice thermal conductivity; numerical simulations; semiconductor quantum dot superlattices; thermal phonon scattering; thermal properties; Accuracy; Conducting materials; Lattices; Particle scattering; Phonons; Quantum dots; Quantum mechanics; Size control; Superlattices; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2004. 4th IEEE Conference on

Print_ISBN

0-7803-8536-5

Type

conf

DOI

10.1109/NANO.2004.1392236

Filename

1392236