• DocumentCode
    2531856
  • Title

    STTM-promising nanoelectronic DRAM device

  • Author

    Baik, Seung Jae ; Huo, Zongliang ; Lim, Seung-Hyun ; Yeo, In-Seok ; Choi, Siyoung ; Chung, U-in ; Moon, Joo Tae

  • Author_Institution
    Semicond. R&D Center, Samsung Electron. Co., Ltd., Gyeonggi, South Korea
  • fYear
    2004
  • fDate
    16-19 Aug. 2004
  • Firstpage
    45
  • Lastpage
    46
  • Abstract
    We have examined STTM as the alternative to DRAM in terms of scalability, operation power, and sensing signal. The characteristics of STTM are shown to strongly depend on those of vertical transistor. To obtain maximum performance, fully depleted vertical transistor is essential. Moreover, it is shown that scaling below 50 nm could exhibit long enough retention time for nonvolatile random access memory application.
  • Keywords
    DRAM chips; nanoelectronics; nanoelectronic DRAM device; nonvolatile random access memory application; operation power; retention time; scalability; scalable two transistor memory; sensing signal; vertical transistor; Capacitance; Leakage current; MIM capacitors; Moon; Nanoscale devices; Nonvolatile memory; Random access memory; Research and development; Scalability; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2004. 4th IEEE Conference on
  • Print_ISBN
    0-7803-8536-5
  • Type

    conf

  • DOI
    10.1109/NANO.2004.1392244
  • Filename
    1392244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2531856